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Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules.
- Source :
-
IEEE Transactions on Industry Applications . Mar/Apr2022, Vol. 58 Issue 2, p2324-2331. 8p. - Publication Year :
- 2022
-
Abstract
- Thermal stress of the power semiconductor is one of the most important indicators for the reliability assessment of power electronics-based power systems. The mapping of the Insulated-Gate Bipolar Transistor (IGBT) junction temperature is usually required to analyze the thermal stress and loss dissipation. However, it is difficult to identify inherent mechanisms of the bond-wire and solder layer failure modes in IGBT power modules. In order to solve the problem, an online method to identify inherent mechanisms of the bond-wire and solder layer failure modes in IGBT power modules is proposed. This method can separate the root causes of the bond-wire lift-off and solder layer fatigue by measuring the on-state voltage drop through a sinusoidal loading current based on an H-bridge circuit, together with its corresponding control and measurement. By comparing the on-state voltage drop at the intersection current and the peak current of the converter, the wear-out conditions of the IGBT power modules can be monitored in real-time with the determination of different failure modes. Finally, experimental results are presented in order to verify the effectiveness and feasibility of the proposed method. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00939994
- Volume :
- 58
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industry Applications
- Publication Type :
- Academic Journal
- Accession number :
- 155866648
- Full Text :
- https://doi.org/10.1109/TIA.2022.3141034