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E‐Band InAs/GaAs Trilayer Quantum Dot Lasers.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Feb2022, Vol. 219 Issue 4, p1-6. 6p. - Publication Year :
- 2022
-
Abstract
- The introduction of a closely stacked quantum dot (QD) structure is considered as one of the most effective approaches to extend the emission wavelength of InAs/GaAs QDs beyond 1.3 μm (1300 nm). Herein, a trilayer QD structure (three closely stacked QD layers) is proposed to further extend the emission wavelength of QDs. Room‐temperature (RT) emission at 1418 nm from InAs/GaAs trilayer QDs is demonstrated. Moreover, based on these results, an E‐band InAs/GaAs trilayer QD laser is fabricated on a GaAs substrate, achieving RT oscillation at 1370 nm with a low threshold current density of 96 A cm−2 under continuous‐wave mode operation. The results indicate that the trilayer QD structure is promising for realizing high‐performance QD lasers on GaAs substrate over 1300 nm without incorporating metamorphic buffer layers. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM dots
*AUDITING standards
*GALLIUM arsenide
*BUFFER layers
*LASERS
Subjects
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 219
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 155381553
- Full Text :
- https://doi.org/10.1002/pssa.202100419