Cite
High near-room temperature figure of merit of n-type Bi2GeTe4-based thermoelectric materials via a stepwise optimization of carrier concentration.
MLA
Yin, Liang-Cao, et al. “High Near-Room Temperature Figure of Merit of n-Type Bi2GeTe4-Based Thermoelectric Materials via a Stepwise Optimization of Carrier Concentration.” Chemical Engineering Journal, vol. 433, Apr. 2022, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.cej.2021.133775.
APA
Yin, L.-C., Liu, W.-D., Shi, X.-L., Gao, H., Li, M., Wang, D.-Z., Wu, H., Kou, L., Guo, H., Wang, Y., Liu, Q., & Chen, Z.-G. (2022). High near-room temperature figure of merit of n-type Bi2GeTe4-based thermoelectric materials via a stepwise optimization of carrier concentration. Chemical Engineering Journal, 433, N.PAG. https://doi.org/10.1016/j.cej.2021.133775
Chicago
Yin, Liang-Cao, Wei-Di Liu, Xiao-Lei Shi, Han Gao, Meng Li, De-Zhuang Wang, Hao Wu, et al. 2022. “High Near-Room Temperature Figure of Merit of n-Type Bi2GeTe4-Based Thermoelectric Materials via a Stepwise Optimization of Carrier Concentration.” Chemical Engineering Journal 433 (April): N.PAG. doi:10.1016/j.cej.2021.133775.