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Unexpected band gap evolution and high carrier mobility sparked by the orbital variation in two-dimensional GaGeX (X = S, Se, Te).
- Source :
-
Physica E . Apr2022, Vol. 138, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
-
Abstract
- As elemental group material, germanium, enjoys a high status in the field of two-dimensional (2D) materials. However, 2D germanene is a gapless semiconductor, which greatly limits its application in optoelectronic devices. Herein, we found an interesting class of 2D materials, named GaGeX (X = S, Se, Te), consisting of two outer GaX layers and an inner germanene, a sandwich structure stacked together by interlayer Ga-Ge bonds. Compared with known 2D materials (such as MoX 2), the band gaps gradually decrease in the order of sulfide, selenide, and telluride, the electronic calculations show that they have a unique band gaps reversely enlarging trend of 0.03, 0.46 and 0.72 eV from GaGeS to GaGeTe, respectively. Moreover, GaGeX is predicted to have superior mobility, especially with a hole mobility of up to 5510 cm2 V−1 s−1 in GaGeTe. These novel phenomena are found closely related to the orbital variation. Our findings render these 2D materials potential candidates for future optoelectronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13869477
- Volume :
- 138
- Database :
- Academic Search Index
- Journal :
- Physica E
- Publication Type :
- Academic Journal
- Accession number :
- 155059439
- Full Text :
- https://doi.org/10.1016/j.physe.2021.115112