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Symmetry and asymmetry induced dynamics in a memristive twin-T circuit.

Authors :
Kamdjeu Kengne, Léandre
Mboupda Pone, Justin Roger
Fotsin, Hilaire Bertrand
Source :
International Journal of Electronics. Feb 2022, Vol. 109 Issue 2, p337-366. 30p.
Publication Year :
2022

Abstract

The dynamics of memristor–based chaotic oscillators with perfect symmetry is very well documented. However, the literature is relatively poor concerning the behaviour of such types of circuits when their symmetry is perturbed. In this paper, we consider the dynamics of a memristive twin-T oscillator. Here, the symmetry is broken by assuming a memristor with an asymmetric pinched hysteresis loop i − v characteristics. A variable disturbance term is introduced into the current-voltage relationship of the memristor in order to obtain an asymmetric characteristic. Phase portraits, bifurcations, basins of attraction, and Lyapunov exponents are used to illustrate various nonlinear patterns experienced by the underlined memristive circuit. It is shown that in the absence of the disturbance term, the i − v characteristic of the memristor is perfectly symmetric which induces typical behaviours such as coexisting symmetric bifurcation and bubbles, spontaneous symmetry-breaking, symmetry recovering, and coexistence of several pairs of mutually symmetric attractors. With the perturbation term, the symmetry of the oscillator is destroyed resulting in more complex nonlinear phenomena such as coexisting asymmetric bubbles of bifurcation, critical transitions, and multiple coexisting (i.e. up to five) asymmetric attractors. Also, PSpice simulation studies confirm well the results of theoretical predictions. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00207217
Volume :
109
Issue :
2
Database :
Academic Search Index
Journal :
International Journal of Electronics
Publication Type :
Academic Journal
Accession number :
155002571
Full Text :
https://doi.org/10.1080/00207217.2021.1908631