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Drift-diffusion models for the simulation of a graphene field effect transistor.
- Source :
-
Journal of Mathematics in Industry . 1/24/2022, Vol. 12 Issue 1, p1-11. 11p. - Publication Year :
- 2022
-
Abstract
- A field effect transistor having the active area made of monolayer graphene is simulated by a drift-diffusion model coupled with the Poisson equation. The adopted geometry, already proposed in (Nastasi and Romano in IEEE Trans. Electron. Devices 68:4729–4734, 2021, https://doi.org/10.1109/TED.2021.3096492), gives a good current-ON/current-OFF ratio as it is evident in the simulations. In this paper, we compare the numerical simulations of the standard (non-degenerate) drift-diffusion model, that includes the Einstein diffusion coefficient, with the degenerate case. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21905983
- Volume :
- 12
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Mathematics in Industry
- Publication Type :
- Academic Journal
- Accession number :
- 154872905
- Full Text :
- https://doi.org/10.1186/s13362-022-00120-3