Zn-doped CdS/CdSe as efficient strategy to enhance the photovoltaic performance of quantum dot sensitized solar cells.

• A transition metal Zn-doped CdS/CdSe QDSSCs are performed by SILAR. • The narrowed band gap caused the strong light absorbance. • The high concentration carriers promoted the shift of Fermi level towards the CB. • Zn-doping contributes to attenuation of the interfacial charge recombination rate and prolongs the electron lifetime. Metal ion doping is a suitable approach for optimizing quantum dots (QDs), which can change the recombination dynamics and charge separation of QDs via creating electronic states within their band gap, and improve their optical and electrical properties. In this work, the transition metal Zn-doped CdS and CdSe QDs are performed by SILAR (successive ionic layer adsorption and reaction) method. And the sensitized solar cells (QDSSCs) based on the Zn-doped CdS and CdSe QDs are assembled. The effect of Zn-doping concentration on the optical properties and charge carrier transport characteristics of photoanodes is investigated. Based on these QDs sensitized TiO 2 photoanodes, the assembled QDSSCs with Zn-dopant of a molar concentration of 1.6 mol % exhibited a maximum power conversion efficiency (PCE) of 5.59 %, which is increased by 26.76 % in comparison with that of the QDSSC (4.41%) without Zn-doping. The significantly enhanced PCE of QDSSCs was attributed to improved current density and open-circuit voltage, particularly arising from enhanced light absorbance by narrowing the band gap with the midgap states and upshift of Fermi level promoted by the high electrons concentration due to the ionization of Zn impurities. In addition, the Zn-doping contributes to attenuation of the interfacial charge recombination rate and prolongs the electron lifetime, resulting in more efficient charge collection in QDSSCs. [ABSTRACT FROM AUTHOR]