Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide.

The impact of the Pre Amorphization by Ge Implantation (PAI) on Ni 0.9 Pt 0.1 silicide is studied. Reactions between a 10 nm thick Ni 0.9 Pt 0.1 film and Si (100) substrate are analyzed as a function of the induced amorphous-Si thicknesses. In view of being compatible with the integration constraint of the 28 nm CMOS technologies, the Ge implantation dose is fixed at a low level. The relative position of the amorphous-Si/crystalline-Si interface and the silicide growth front is defined for each sample. Then, in-situ XRD analyses, X-Ray Reflectometry (XRR) and Sheet resistance (Rs) measurements are achieved to provide a deep study of silicide growth kinetics and silicide properties. First, a clear relationship is established between the silicide growth rate and the amorphous-Si thickness. Secondly, an easier NiSi nucleation and a decrease of its resistivity is observed when NiSi nucleates at the θ-Ni 2 Si/a-Si interface. These observations are discussed considering the impact of the amorphous-Si layer on the driving force, the nucleation barrier, the lateral growth rate, and NiSi roughness. [Display omitted] • The effect of a Pre Amorphization-Implantation (PAI) using Ge on the Ni 0.9 Pt 0.1 silicides is studied using in-situ XRD, XRR and Rs. • A clear impact on the Ni 0.9 Pt 0.1 silicides formation and properties is found. • A relationship is established between the silicide growth rate and the amorphous thickness. • A decrease of the NiSi resistivity is observed when NiSi nucleates at the θ-Ni 2 Si/a-Si interface. • The a-Si layer impact on driving force, nucleation barrier, lateral growth rate, and NiSi roughness is discussed. [ABSTRACT FROM AUTHOR]