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Rare-earth defects and defect-related luminescence in ZnS.

Authors :
Hoang, Khang
Source :
Journal of Applied Physics. 1/7/2022, Vol. 131 Issue 1, p1-8. 8p.
Publication Year :
2022

Abstract

Structure and energetics of rare-earth (RE) defects and luminescence of RE and related defects in zincblende zinc sulfide (ZnS) are investigated using hybrid density-functional defect calculations. We find that europium (Eu) is stable predominantly as the divalent Eu 2 + ion in bulk ZnS. The trivalent Eu 3 + ion is structurally and electronically stable but energetically unfavorable compared to Eu 2 + due to the presence of low-energy native defects and Eu 2 + -related defect complexes. Other RE dopants, dysprosium (Dy) and erbium (Er), are stable only as Dy 3 + and Er 3 + , respectively. These results provide an explanation why it is difficult to realize Eu 3 + in bulk ZnS. A non-negligible Eu 3 + /Eu 2 + ratio might be achieved with Li co-doping under S-rich (and probably non-equilibrium) synthesis conditions. Optically, Eu-related defects can act as carrier traps for band-to-defect transitions and emit light in the visible range. To assist with experimental optical characterization of the RE defects, we include band-to-defect luminescence involving native defects (Zn vacancies) and/or non-RE impurities (Cu, Cl, and Al) that may also be present in Eu-doped ZnS samples and assign luminescence centers often observed in experiments to specific defect configurations. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
131
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
154566320
Full Text :
https://doi.org/10.1063/5.0069390