Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack.

MLA

Min, Kyung Kyu, et al. “Impact of Interlayer Insulator Formation Methods on HfOx Ferroelectricity in the Metal–ferroelectric–insulator–semiconductor Stack.” Applied Physics Letters, vol. 120, no. 1, Jan. 2022, pp. 1–7. EBSCOhost, https://doi.org/10.1063/5.0077840.

APA

Min, K. K., Kwon, S. J., Kim, Y., Yu, J., Lee, J.-H., Park, B.-G., & Kwon, D. (2022). Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack. Applied Physics Letters, 120(1), 1–7. https://doi.org/10.1063/5.0077840

Chicago

Min, Kyung Kyu, Seok Jin Kwon, Yeonwoo Kim, Junsu Yu, Jong-Ho Lee, Byung-Gook Park, and Daewoong Kwon. 2022. “Impact of Interlayer Insulator Formation Methods on HfOx Ferroelectricity in the Metal–ferroelectric–insulator–semiconductor Stack.” Applied Physics Letters 120 (1): 1–7. doi:10.1063/5.0077840.