Electro−Photo Double Control of Resistive Switching in Electron‐Doped La0.9Hf0.1MnO3 Films.

Electron‐doped La0.9Hf0.1MnO3 thin films are epitaxially integrated onto 0.7Pb(Mg1/3Nb2/3)O3−0.3PbTiO3 single‐crystalline ferroelectric substrates to construct multiferroic heterostructures. By applying a light field and not just changing temperature, the relative magnitude of the electric‐field‐generated lattice strain effect and interfacial charge effect is identified to be controllable. Moreover, the electric field can enhance the photoresistance effect by 26%. This, accompanied by light‐tunable electroresistance effect, intimate interaction between the electric‐field‐generated and light‐generated effects is demonstrated. Herein, a route to achieve low‐power multifield (light and electric field) control of electronic transport in electron‐doped perovskite manganites is provided. [ABSTRACT FROM AUTHOR]