Cite
Correction factors to strength of thin silicon die in three- and four-point bending tests due to nonlinear effects.
MLA
Tsai, M. Y., and P. S. Huang. “Correction Factors to Strength of Thin Silicon Die in Three- and Four-Point Bending Tests Due to Nonlinear Effects.” Microelectronics Reliability, vol. 128, Jan. 2022, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.microrel.2021.114424.
APA
Tsai, M. Y., & Huang, P. S. (2022). Correction factors to strength of thin silicon die in three- and four-point bending tests due to nonlinear effects. Microelectronics Reliability, 128, N.PAG. https://doi.org/10.1016/j.microrel.2021.114424
Chicago
Tsai, M.Y., and P.S. Huang. 2022. “Correction Factors to Strength of Thin Silicon Die in Three- and Four-Point Bending Tests Due to Nonlinear Effects.” Microelectronics Reliability 128 (January): N.PAG. doi:10.1016/j.microrel.2021.114424.