Effect of boron content on the microstructure and electromagnetic properties of SiBCN ceramics.

Electromagnetic wave (EMW) absorbing materials have excellent potential for various applications in civil engineering and the military. In this study, siliconboron carbonitride (SiBCN) ceramics with excellent EMW absorption capability and oxidation resistance were obtained by adjusting the boron content. The results revealed that the graphite crystallite size in the SiBCN ceramics increased from 3.42 to 3.78 nm, whereas the thickness of the oxide layer decreased from 16.6 to 8.2 μm. The highest electrical conductivity and permittivity for the SiBCN ceramics were obtained when the boron content was 5%. The minimum reflection loss was −35.25 dB at 10.57 GHz and a ceramic thickness of 2.0 mm. At a temperature of 600 °C, the SiBCN ceramic exhibited excellent EMW attenuation ability; particularly, the minimum reflection loss reached −29.18 dB at 9.65 GHz and a ceramic thickness of 2.5 mm. The superior EMW absorption properties of the SiBCN ceramics at high temperatures can be ascribed to the synergistic effect of relaxation and conductivity. The results suggest that boron could enhance the transformation of amorphous carbon into crystalline graphite and increase the number of heterointerfaces and conductive paths. This work provides a method for obtaining SiBCN ceramics with excellent EMW absorption properties. Therefore, the electrical conductivities of the ceramics increased with increasing temperature as both the migration and hopping conductances increased with increasing temperature. Additionally, the increase in temperature enabled the electrons to leap from the valence band into the conduction band, which also improved the electrical conductivity. [ABSTRACT FROM AUTHOR]