Thermal-piezoelectric problem of a semiconductor medium during photo-thermal excitation.

The main goal of this paper is to develop a mathematical model for the piezoelectric elastic-semiconductor medium. The medium is homogeneous and isotropic that is exposed to photothermal excitation processes. Gauss's law of electrostatics is used to obtain the effect of the piezoelectric phenomenon. The governing equations with the electric potential are expressed in terms of thermoelasticity theory and photothermal theory. One-dimensional Laplace transform is used to get the solution of some physical quantities when the heat sources and body forces are absent. The mechanical forces and thermal loads are used to get the analytical solution of physical quantities under investigation. The inverse Laplace technique with a numerical method is employed to obtain the solution in the time-physical domain. A novel parameter depends on pyro-electric moduli is presented. Some numerical results are illustrated and shown graphically. [ABSTRACT FROM AUTHOR]