Solar-blind ultraviolet photodetectors based on homoepitaxial β-Ga2O3 films.

β gallium oxide (β-Ga 2 O 3) is a promising material for the detection of solar-blind ultraviolet (SBUV). The quality of β-Ga 2 O 3 crystal has a crucial influence on the performance of the photodetectors (PDs). In this paper, SBUV PDs were fabricated on high quality homoepitaxial β-Ga 2 O 3 films grown by metal organic chemical vapor deposition (MOCVD). Both photoconductor PD and Schottky barrier diode (SBD) PD were prepared. The PDs showed excellent performance. For the photoconductor PD, the responsivity and EQE under the illumination of 254 nm light at 20 V bias were respectively 1.08 A/W and 5.32 × 102%. For the SBD PD, the I 254 /I dark at −20 V was 320, and the corresponding rejection ratio I 254 /I 365 was 42. • Solar-blind ultraviolet photodetectors were fabricated on high quality homoepitaxial β-Ga 2 O 3 films grown by MOCVD. • Both photoconductor photodetector and SBD photodetector were fabricated. • The photodetectors showed excellent detection performance. [ABSTRACT FROM AUTHOR]