Physics-Based Trench-Gate Field-Stop IGBT Modeling With Optimization-Based Parameter Extraction for Device Parameters.

MLA

Ding, Yifei, et al. “Physics-Based Trench-Gate Field-Stop IGBT Modeling With Optimization-Based Parameter Extraction for Device Parameters.” IEEE Transactions on Electron Devices, vol. 68, no. 12, Dec. 2021, pp. 6305–12. EBSCOhost, https://doi.org/10.1109/TED.2021.3120691.

APA

Ding, Y., Yang, X., Liu, G., & Wang, J. (2021). Physics-Based Trench-Gate Field-Stop IGBT Modeling With Optimization-Based Parameter Extraction for Device Parameters. IEEE Transactions on Electron Devices, 68(12), 6305–6312. https://doi.org/10.1109/TED.2021.3120691

Chicago

Ding, Yifei, Xin Yang, Guoyou Liu, and Jun Wang. 2021. “Physics-Based Trench-Gate Field-Stop IGBT Modeling With Optimization-Based Parameter Extraction for Device Parameters.” IEEE Transactions on Electron Devices 68 (12): 6305–12. doi:10.1109/TED.2021.3120691.