A Low-Leakage Variation-Aware 10T SRAM Cell for IoT Applications.

MLA

Raikwal, Pushpa, et al. “A Low-Leakage Variation-Aware 10T SRAM Cell for IoT Applications.” Journal of Circuits, Systems & Computers, vol. 30, no. 13, Oct. 2021, pp. 1–21. EBSCOhost, https://doi.org/10.1142/S0218126621502431.

APA

Raikwal, P., Shah, A. P., & Neema, V. (2021). A Low-Leakage Variation-Aware 10T SRAM Cell for IoT Applications. Journal of Circuits, Systems & Computers, 30(13), 1–21. https://doi.org/10.1142/S0218126621502431

Chicago

Raikwal, Pushpa, Ambika Prasad Shah, and Vaibhav Neema. 2021. “A Low-Leakage Variation-Aware 10T SRAM Cell for IoT Applications.” Journal of Circuits, Systems & Computers 30 (13): 1–21. doi:10.1142/S0218126621502431.