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ScAlN/AlN Film-Based Lamé Mode Resonator With High Effective Electromechanical Coupling Coefficient.

Authors :
Zhou, Jie
Liu, Yan
Xu, Qinwen
Xie, Ying
Cai, Yao
Liu, Jieyu
Liu, Wenjuan
Tovstopyat, Alexander
Sun, Chengliang
Source :
Journal of Microelectromechanical Systems. Oct2021, Vol. 30 Issue 5, p677-679. 3p.
Publication Year :
2021

Abstract

The effective electromechanical coupling coefficient (${K}_{eff}^{2}{)}$ of resonators is crucial for application in radio communication such as fabricating bandpass filters. In this letter, we present a $0^{\text {th}}$ symmetry (${S}_{0}{)}$ mode Lamé mode resonator (LMR) operating at 2.563 GHz with a high ${K}_{\vphantom {D_{j}}{eff}}^{2}$ of 7.83%. A 20% Scandium-doped Aluminum Nitride (Sc0.2Al0.8N)/AlN composite piezoelectric film is used as the piezoelectric layer. The ratio of piezoelectric layer thickness (${t}_{\vphantom {D_{j}}{pie}}{)}$ and electrode pitch (${P}_{ele}{)}$ is optimized by finite element analysis (FEA) method and the highest experimental ${K}_{eff}^{2}$ is obtained at ${t}_{pie}/{P}_{ele} =0.65$. The proposed LMR with Sc doping and structural optimization shows fascinating prospects for constructing broadband filters. [2021-0113] [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10577157
Volume :
30
Issue :
5
Database :
Academic Search Index
Journal :
Journal of Microelectromechanical Systems
Publication Type :
Academic Journal
Accession number :
153764149
Full Text :
https://doi.org/10.1109/JMEMS.2021.3102145