75 nm Gate Length PHEMT With f max = 800 GHz Using Asymmetric Gate Recess: RF and Noise Investigation.

We report a high maximum frequency of oscillation (${f} _{\text {max}}$) and a current-gain cutoff frequency (${f} _{\text {T}}$) of 800 and 260 GHz, respectively, with pseudomorphic high-electron mobility transistor (PHEMT), using an InGaAs/InAs composite channel and an asymmetric gate recess. This result was achieved with long gate length ${L} _{\text {G}} = {75}$ nm. The RF small signal equivalent circuit (SSEC) was extracted up to 110 GHz. Moreover, noise parameters extraction gives a minimum noise figure (NFmin) of 0.8 dB (with associated gain ${G} _{\text {ass}} = {16}$ dB) and 1.8 dB (with associated gain ${G} _{\text {ass}} = {11.6}$ dB) at 40 and 94 GHz, respectively. In this study, the gate leakage current was considered in the SSEC of the transistor (${g} _{\text {gf}}$ and ${g} _{\text {df}}$) and for extraction of the noise parameters. [ABSTRACT FROM AUTHOR]