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An Efficient GFET Structure.
- Source :
-
IEEE Transactions on Electron Devices . Sep2021, Vol. 68 Issue 9, p4729-4734. 6p. - Publication Year :
- 2021
-
Abstract
- A graphene FET (GFET), where the active area is made of monolayer large-area graphene, is simulated including a full 2-D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the semiclassical Boltzmann equations for charge transport by a suitable discontinuous Galerkin approach. The critical issue in a GFET is the difficulty of fixing the OFF state which requires an accurate calibration of the gate voltages. In this article, we propose and simulate a GFET structure which has well-behaved characteristic curves similar to those of conventional (with gap) semiconductor materials. The introduced device has a clear off region and can be the prototype of devices suited for postsilicon nanoscale electron technology. The specific geometry overcomes the problems of triggering the minority charge current and gives a viable way for the design of electron devices based on large area monolayer graphene as a substitute of standard semiconductors in the active area. The good FET behavior of the current versus the gate voltage makes the simulated device very promising and a challenging case for experimentalists, even if it is crucial to better understand the resistance effect of charge carriers at the contact-graphene region. [ABSTRACT FROM AUTHOR]
- Subjects :
- *NANOTECHNOLOGY
*BOLTZMANN'S equation
*SEMICONDUCTOR materials
*CHARGE carriers
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 153763941
- Full Text :
- https://doi.org/10.1109/TED.2021.3096492