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Feedback Stabilization of a Negative-Capacitance Ferroelectric and its Application to Improve the f T of a MOSFET.
- Source :
-
IEEE Transactions on Electron Devices . Oct2021, Vol. 68 Issue 10, p5101-5107. 7p. - Publication Year :
- 2021
-
Abstract
- We propose a parallel negative-capacitance field-effect transistor (P-NCFET) structure, in which a ferroelectric operating in its negative-capacitance region is placed in parallel with the gate and source terminals of a MOSFET. The P-NCFET is stabilized by combining careful matching of the ferroelectric with the gate capacitance along with simple feedback realized using current mirrors. The novel stabilization approach opens the possibility for a variety of new applications that exploit the negative capacitance of ferroelectrics to cancel capacitance in integrated circuits. As an example, we show the P-NCFET structure has a significantly higher unity-current-gain frequency ${f}_{T}$ compared to a conventional MOSFET. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 153710732
- Full Text :
- https://doi.org/10.1109/TED.2021.3108125