Gate Voltage-Dependence of Junction Capacitance in MOSFETs.

The gate–bulk/body voltage ${V}_{\text {gb}}$ -dependent effect of the source or drain–bulk/body junction capacitance ${C}_{j}$ that is originated from the variation in the gate-edge sidewall junction area due to the modulation of the channel depletion depth in the OFF-state region of bulk/PD-SOI MOSFETs is physically revealed. This ${V}_{\text {gb}}$ -dependent ${C}_{j}$ is accurately extracted from the measured S-parameters and newly modeled in the wide off-bias range. The geometry-dependent model and parameter extraction method are proposed to make the new ${C}_{j}$ model applicable in SPICE. [ABSTRACT FROM AUTHOR]