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Artificial synaptic device and neural network based on the FeGa/PMN-PT/FeGa memtranstor.
- Source :
-
Applied Physics Letters . 11/8/2021, Vol. 199 Issue 19, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- The memtranstors employing the magnetoelectric effects have the great potential to develop artificial synaptic devices. We have fabricated a memtranstor made of the FeGa/PMN-PT/FeGa multiferroic heterostructure and used it to mimic the functions of synapses. The magnetoelectric voltage of the device can be continuously tuned by applying a train of electric-field pulses. Consequently, synaptic plasticity, including the long-term potentiation, long-term depression, and spiking-time-dependent plasticity, has been demonstrated in the memtranstor at room temperature. Simulations on a neural network made of an array of the memtranstors reveal the capability of pattern learning with a high accuracy. [ABSTRACT FROM AUTHOR]
- Subjects :
- *NEUROPLASTICITY
*LONG-term potentiation
*MAGNETOELECTRIC effect
*VOLTAGE
*SYNAPSES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 199
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 153549974
- Full Text :
- https://doi.org/10.1063/5.0069385