Corrigendum to "The transition from generation–recombination noise in bulk semiconductors to discrete switching in small-area semiconductors" [Physica A 568 (2021) 125748].

• The g-r bulk noise is interpreted in terms of the number of traps. • Discrete switching is obtained by reducing the number of traps to just one single trap. • The g-r noise due to a single trap is controlled by the underlying random telegraph signal (RTS). • This gives rise to a random succession of g-r pulses in the conduction band. • The RTS relaxation time is shown to be equal to the g-r relaxation time of conduction electrons. [ABSTRACT FROM AUTHOR]