Selete says batch CVD HfSiOx film best choice for high-k gate dielectric.

Reports that work at Selete, Japan's semiconductor technology consortium, finds in 2004 that high-k gate dielectric film made of HfSiO[sub x] reduces gate leakage just as well as HfAlO[sub x]. More efficient production of high-k dielectric film through a batch CVD process instead of atomic layer deposition; Comparison of the materials' carrier mobility, threshold voltage and off-current leakage; Implications on solid state technology.