Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfOx-based metal-ferroelectric-insulator-semiconductor stack.

MLA

Min, Kyung Kyu, et al. “Interlayer Engineering for Enhanced Ferroelectric Tunnel Junction Operations in HfOx-Based Metal-Ferroelectric-Insulator-Semiconductor Stack.” Nanotechnology, vol. 32, no. 49, Dec. 2021, pp. 1–8. EBSCOhost, https://doi.org/10.1088/1361-6528/ac1e50.

APA

Min, K. K., Yu, J., Kim, Y., Lee, J.-H., Kwon, D., & Park, B.-G. (2021). Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfOx-based metal-ferroelectric-insulator-semiconductor stack. Nanotechnology, 32(49), 1–8. https://doi.org/10.1088/1361-6528/ac1e50

Chicago

Min, Kyung Kyu, Junsu Yu, Yeonwoo Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park. 2021. “Interlayer Engineering for Enhanced Ferroelectric Tunnel Junction Operations in HfOx-Based Metal-Ferroelectric-Insulator-Semiconductor Stack.” Nanotechnology 32 (49): 1–8. doi:10.1088/1361-6528/ac1e50.