Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions.

MLA

Shekhawat, Aniruddh, et al. “Effect of Ferroelectric and Interface Films on the Tunneling Electroresistance of the Al2O3/Hf0.5Zr0.5O2 Based Ferroelectric Tunnel Junctions.” Nanotechnology, vol. 32, no. 48, Nov. 2021, pp. 1–8. EBSCOhost, https://doi.org/10.1088/1361-6528/ac1ebe.

APA

Shekhawat, A., Hsain, H. A., Lee, Y., Jones, J. L., & Moghaddam, S. (2021). Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions. Nanotechnology, 32(48), 1–8. https://doi.org/10.1088/1361-6528/ac1ebe

Chicago

Shekhawat, Aniruddh, H Alex Hsain, Younghwan Lee, Jacob L Jones, and Saeed Moghaddam. 2021. “Effect of Ferroelectric and Interface Films on the Tunneling Electroresistance of the Al2O3/Hf0.5Zr0.5O2 Based Ferroelectric Tunnel Junctions.” Nanotechnology 32 (48): 1–8. doi:10.1088/1361-6528/ac1ebe.