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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure.
- Source :
-
Chinese Physics B . Aug2021, Vol. 30 Issue 8, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- The threshold voltage (Vth) of the p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) is investigated via Silvaco-Atlas simulations. The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier height Φ1,p, polarization charge density σb, and equivalent unite capacitance Coc. It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage Vth, and threshold voltage |Vth| increases with the reduction in p-GaN doping concentration and the work-function of gate metal. Meanwhile, the increase in gate dielectric relative permittivity may cause the increase in threshold voltage |Vth|. Additionally, the parameter influencing output current most is the p-GaN doping concentration, and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5 × 1016 cm−3 at VGS = –12 V and VDS = –10 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 30
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 153377409
- Full Text :
- https://doi.org/10.1088/1674-1056/ac0793