Back to Search
Start Over
TID and Heavy-Ion Performance of an RHBD Multichannel Digitizer in 180-nm CMOS.
- Source :
-
IEEE Transactions on Nuclear Science . Jul2021, Vol. 68 Issue 7, p1414-1422. 9p. - Publication Year :
- 2021
-
Abstract
- We present the design, fabrication, and radiation testing of a custom 20-channel application-specific integrated circuit (ASIC) for amplification and digitization of microvolt signal levels from space instrumentation (e.g., thermopile sensors) operating in harsh space radiation environments. The ASIC is fabricated in a commercial 180-nm complementary metal oxide silicon (CMOS) process node using a combination of radiation hard by design and discrete-time analog signal processing to mitigate leakage, offset, 1/f, and thermal noise. The chip has an input-referred integrated noise voltage of 190 nV in a 240-Hz bandwidth. Irradiation with very high total ionizing dose (TID) and high-energy heavy ions was carried out to evaluate the chip’s radiation hardness. The chip’s postradiation performance evidenced parametric immunity to greater than 50 Mrad (Si) TID and no single-event latch-up up to at least 123.6 MeV-cm2/mg linear energy transfer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 68
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 153068727
- Full Text :
- https://doi.org/10.1109/TNS.2021.3080179