Cite
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C.
MLA
Agopian, P. G. D., et al. “Gate Dielectric Material Influence on DC Behavior of MO(I)SHEMT Devices Operating up to 150 °C.” Solid-State Electronics, vol. 185, Nov. 2021, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.sse.2021.108091.
APA
Agopian, P. G. D., Carmo, G. J., Martino, J. A., Simoen, E., Peralagu, U., Parvais, B., Waldron, N., & Collaert, N. (2021). Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C. Solid-State Electronics, 185, N.PAG. https://doi.org/10.1016/j.sse.2021.108091
Chicago
Agopian, P.G.D., G.J. Carmo, J.A. Martino, E. Simoen, U. Peralagu, B. Parvais, N. Waldron, and N. Collaert. 2021. “Gate Dielectric Material Influence on DC Behavior of MO(I)SHEMT Devices Operating up to 150 °C.” Solid-State Electronics 185 (November): N.PAG. doi:10.1016/j.sse.2021.108091.