Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors.

• Analysis of the thermal cross-coupling effect in advanced UTBB transistors through 3D numerical simulations. • Study was performed through 3D numerical simulations validated with experimental data from the literature. • It could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the its bias conditions. • By varying the distance between the devices from 1 μm to 50 nm, one can observe degradations in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device. • All thermal coupling effects are more pronounced for distances below 400 nm. The focus of this work is to perform a first-time analysis of the thermal cross-coupling of a device on a neighbor one in advanced UTBB transistors through 3D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 µm to 50 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device. [ABSTRACT FROM AUTHOR]