Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures.

• This work studied the effects of the fin width variation on SOI Junctionless Nanowire Transistors (JNTs) from 300 K to 500 K. • The results show near ideal SS for all devices with temperature variation of 0.2 mV/dec.K. • The V TH results show temperature variation of 0.30–0.36 mV/K. • Wider JNTs show better carrier mobility at a higher temperature than narrow ones due to the impurity scattering. • Narrower JNTs show higher mobility degradation with higher temperature due to the phonon scattering. This work studied the effects of the fin width variation on Silicon-on-Insulator Junctionless Nanowire Transistors (JNTs) working in the temperature range of 300 K to 500 K. The effects of the temperature on the measured drain current and gate capacitance, and on the extracted electrical parameters such as the threshold voltage, the subthreshold slope, and the electron mobility were analyzed. Results show that JNTs with larger fin width may present better carrier mobility at a higher temperature than narrow ones as the degradation due to phonon scattering is decreased and the impurity scattering becomes more relevant. It is demonstrated that JNTs with narrow fin width show higher phonon scattering and higher mobility variation with the temperature than wider ones. [ABSTRACT FROM AUTHOR]