High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell.

In this paper, an efficient three-layered p-In 0.6 Ga 0.6 N/p-In 0.7 Ga 0.7 N/n-In 0.7 Ga 0.7 N (PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were simulated using the SCAPS-1D software. The effects of the thickness and carrier density of the PPN layer on solar cell performance were evaluated. The results were compared with those of the performance of the PN-junction solar cell. Results revealed that a thin top p-InGaN with a high carrier density had a considerable influence on the performance of the solar cell. Adding a p-InGaN layer as thin as 0.01 μ m on the top of the PN-junction solar cell substantially improved the conversion efficiency of the solar cell from 21.39% (PN) to 30.23% (PPN). [Display omitted] • p-In 0.6 Ga 0.6 N/p-In 0.7 Ga 0.7 N/n-In 0.7 Ga 0.7 N (PPN) solar cell with high conversion and quantum efficiency was developed. • The PPN solar cell achieved 30.23% conversion efficiency and 98.6% quantum efficiency. • Adding a thin p-InGaN layer on the top of the PN-junction solar cell drastically improved the conversion efficiency. • The top p-InGaN created a graded energy bandgap and increased the number of holes in the solar cell. [ABSTRACT FROM AUTHOR]