Back to Search
Start Over
TCAD-Based Investigation of Statistical Variability Immunity in U-Channel FDSOI n-MOSFET for Sub-7-nm Technology.
- Source :
-
IEEE Transactions on Electron Devices . Jun2021, Vol. 68 Issue 6, p2611-2617. 7p. - Publication Year :
- 2021
-
Abstract
- In this article, the impact of random fluctuation sources, such as metal gate granularity (MGG), line edge roughness (LER), and random dopant fluctuations (RDFs), are numerically studied for U-shaped n-channel fully depleted silicon on insulator (FDSOI) MOSFET (U-SOIFET) over conventional n-channel FDSOI MOSFET (C-SOIFET) for 7-nm technology node. This article reports that improved short-channel effect immunity in U-SOIFET results in less 1σ threshold voltage (VT) and ON-current (ION) fluctuations compared to C-SOIFET due to MGG and LER variability sources. U-SOIFET exhibits a low VT mismatch index (AVΔVT = 1.78 mV. μm) close to the literature reported. Due to combined variability sources, U-SOIFET shows less VT, ION, subthreshold swing (SS), and DIBL fluctuations compared to C-SOIFET. Immunity to statistical variability sources makes U-SOIFET a suitable silicon on insulator (SOI) device architecture for future CMOS logic device applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 151778252
- Full Text :
- https://doi.org/10.1109/TED.2021.3074116