Cite

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types.

MLA

Agarwal, Aditi, et al. “650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-Nm Gate Oxide: Relative Performance of Three Cell Types.” IEEE Transactions on Electron Devices, vol. 68, no. 5, May 2021, pp. 2395–400. EBSCOhost, https://doi.org/10.1109/TED.2021.3067921.



APA

Agarwal, A., Han, K., & Baliga, B. J. (2021). 650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types. IEEE Transactions on Electron Devices, 68(5), 2395–2400. https://doi.org/10.1109/TED.2021.3067921



Chicago

Agarwal, Aditi, Kijeong Han, and B. J. Baliga. 2021. “650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-Nm Gate Oxide: Relative Performance of Three Cell Types.” IEEE Transactions on Electron Devices 68 (5): 2395–2400. doi:10.1109/TED.2021.3067921.