Existence of ferroelectric resistive switching memory in MoS2/PVDF heterojunction devices.

The heterostructure device based on polyvinylidene fluoride (PVDF)/MoS2 films was succesfully prepared and showed a good hysteresis feature with a unique resistive switching perpromance, where the logarithmic I–V curve looks like a butterfly. The on-off ratio for the resistive switching in the device based on PVDF/MoS2 films reaches 2.5 × 102 and the resistive switching happens at −0.9 V and −4.9 V for a half loop. The influence of the introduction of MoS2 and ferroelectric PVDF film was also studied and compared to a device based on a single film. The underlying physical mechanism for the unique resistive transition was attributed to the polarization field from the ferroelectric polymer PVDF and the S vacancies in MoS2. [ABSTRACT FROM AUTHOR]