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Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs).
- Source :
-
Journal of Applied Physics . 7/14/2021, Vol. 130 Issue 2, p1-10. 10p. - Publication Year :
- 2021
-
Abstract
- Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in Vth, the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal–insulator–semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (σ) of the Vth of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 130
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 151399751
- Full Text :
- https://doi.org/10.1063/5.0051045