The nonvolatile resistive switching memristor with Co-Ni layered double hydroxide hybrid nanosheets and its application as a artificial synapse.

[Display omitted] • Memristor based on Co-Ni LDHs hybrid nanosheets is reported. • Devices exhibit nonvolatile resistance switching behavior. • Multiple progressive resistance switches could be achieved. • Memristors were used to simulate synaptic function in biology. • O vacancy is the physical mechanism of the resistance switch behavior. Because of its excellent electrical properties and promising application prospects, two-dimensional materials have attracted extensive research interests of researchers. Among them, Co-Ni layered double hydroxide (LDH) has semiconductor properties and has been widely studied in super capacitor. However, there are few reports about 2D Co-Ni LDHs materials as memristors. In this work, a memristor based on Co-Ni LDHs hybrid nanosheets is reported. After electroforming, Al/Co-Ni LDHs/Al devices exhibit nonvolatile resistance switching behavior. More importantly, multiple progressive resistance switches could be achieved by adjusting the duration or amplitude of the applied pulse (less than the set threshold voltage to prevent a sudden setting process). Given its gradual resistive switching, Co-Ni LDHs-based memristors were used to simulate synaptic function in biology, including: "learning" and "forgetting" process, STP and LTP, PPF characteristics, and STDP. By studying the microstructure, it is proposed that the O vacancy is the physical mechanism of the resistance switch behavior. This work reveals that Co-Ni LDH nanosheets have excellent application potential in memristors, which may open the door to more functions and applications. [ABSTRACT FROM AUTHOR]