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Ferroelectric gate control of Rashba–Dresselhaus spin–orbit coupling in ferromagnetic semiconductor (Zn, Co)O.
- Source :
-
Applied Physics Letters . 2021, Vol. 119 Issue 1, p1-7. 7p. - Publication Year :
- 2021
-
Abstract
- In this paper, we demonstrate the ferroelectric gate control of Rashba–Dresselhaus spin–orbit coupling (R–D SOC) in a hybrid heterostructure consisting of a ferromagnetic semiconductor channel (Zn, Co)O(0001) and a ferroelectric substrate PMN-PT(111). The R–D SOC causes a transverse spin current via the charge-spin conversion, which results in unbalanced transverse spin and charge accumulations due to the spin-polarized band in the ferromagnetic (Zn, Co)O channel. By the reversal of gated ferroelectric polarization, we observed 55% modulation of the R–D SOC correlated Hall resistivity to the magnetization correlated anomalous Hall resistivity and 70% modulation of the low-field magnetoresistance at 50 K. Our experimental results pave a way toward semiconductor-based spintronic-integrated circuits with an ultralow power consumption in ferromagnetic semiconductors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 119
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 151333998
- Full Text :
- https://doi.org/10.1063/5.0047430