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Influence of Cu doping on physical and photo-electrochemical properties of CdS thin films prepared by RF magnetron sputtering.
- Source :
-
Materials Science in Semiconductor Processing . Oct2021, Vol. 133, pN.PAG-N.PAG. 1p. - Publication Year :
- 2021
-
Abstract
- In this paper, Cu doped CdS thin films were prepared on FTO substrates by RF magnetron sputtering and then were annealed at 350 °C–425 °C in vacuum for 20 min. The influences of different Cu-doped concentrations (Cu 4.1, 5.4, 7.3, 9.1 at%) on morphological, structural, optical properties and photo-electrochemical (PEC) properties of CdS thin films were investigated. The PEC characterizations indicated that the photocurrent densities of CdS:Cu (Cu 4.1, 5.4, 7.3, 9.1 at%) thin films increased from 0.94, 1.28,1.86,1.91 mA cm−2 to 1.33, 1.89, 2.40, 3.16 mA cm−2 after annealing. And the PEC properties of CdS:Cu thin films annealed at different temperatures were also studied. FTO/annealed CdS:Cu/Pt photoanode were fabricated to enhance the photocurrent activity and the photocurrent density of FTO/annealed CdS:Cu/5 nm Pt is 1.5 times larger than that of the CdS:Cu electrode without Pt cocatalyst. • CdS:Cu thin films were firstly prepared by magnetron sputtering method. • PEC properties of n type CdS:Cu thin films were firstly studied. • FTO/CdS:Cu/Pt improved PEC performances of CdS:Cu thin films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13698001
- Volume :
- 133
- Database :
- Academic Search Index
- Journal :
- Materials Science in Semiconductor Processing
- Publication Type :
- Academic Journal
- Accession number :
- 151216816
- Full Text :
- https://doi.org/10.1016/j.mssp.2021.105933