Vanadium Oxide Thermal Sensitive Thin Film with TiN Absorbing Layer for Uncooled Infrared Bolometer.

Multilayers' absorption DMDM structure of SiO2/TiNx/SiO2/VOx structure for 8-14 infrared wavelengths is proposed and simulated. Between mid-infrared 8 μm and 14 μm wavelengths, infrared detector with this structure and thermal sensitive VOx of −7%/K TCR, which exhibits high infrared absorption about average 83%, has been fabricated and tested successfully. [ABSTRACT FROM AUTHOR]