Evidence of weak-antilocalization phenomenon in Al-induced crystallization grown polycrystalline-SiGe thin film.

• Large grain Ge rich polycrystalline SiGe thin film on glass at 350 °C using Al-induced layer exchange crystallization. • Degenerate p -type doping from residual Al atoms. • Weak anti-localization effect below 10 K in magnetoresistance. We report the low-temperature magneto-transport properties of a polycrystalline-SiGe thin film realized on glass at 350 ℃ via Al-induced layer exchange crystallization. The film exhibits a degenerate p -type behavior, and we observed evidence of weak-antilocalization (WAL) effect that manifests as an anomalous positive magnetoresistance (MR) below 10 K and weak magnetic fields (B) between ± 1 Tesla. While the spin–orbit coupling length is nearly constant at ~ 40 nm, the temperature dependence of phase-coherence length, which has a maximum value at 4 K (~131 nm), indicates hole-hole scattering as the predominant de-phasing mechanism. This result shows the degenerate Al doping causes the WAL effect in the present system. [ABSTRACT FROM AUTHOR]