Cite
Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells.
MLA
Zheng, Z. W., et al. “Quantum and Transport Scattering Times in Modulation-Doped AlxGa1-XN/GaN Single Quantum Wells.” Applied Physics A: Materials Science & Processing, vol. 80, no. 1, Jan. 2005, pp. 39–42. EBSCOhost, https://doi.org/10.1007/s00339-004-2928-z.
APA
Zheng, Z. W., Shen, B., Qui, Z. J., Gui, Y. S., Tang, N., Liu, J., Chen, D. J., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Chu, J. H., Hoshino, K., & Arakawa, Y. (2005). Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells. Applied Physics A: Materials Science & Processing, 80(1), 39–42. https://doi.org/10.1007/s00339-004-2928-z
Chicago
Zheng, Z.W., B. Shen, Z.J. Qui, Y.S. Gui, N. Tang, J. Liu, D.J. Chen, et al. 2005. “Quantum and Transport Scattering Times in Modulation-Doped AlxGa1-XN/GaN Single Quantum Wells.” Applied Physics A: Materials Science & Processing 80 (1): 39–42. doi:10.1007/s00339-004-2928-z.