Cite
Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition.
MLA
Chen, D. J., et al. “Phase-Separation Suppression in GaN-Rich Side of GaNP Alloys Grown by Metal-Organic Chemical Vapor Deposition.” Applied Physics A: Materials Science & Processing, vol. 80, no. 1, Jan. 2005, pp. 141–44. EBSCOhost, https://doi.org/10.1007/s00339-003-2186-5.
APA
Chen, D. J., Shen, B., Bi, Z. X., Zhang, K. X., Gu, S. I., Zhang, R., Shi, Y., Zheng, Y. D., Sun, X. H., Wan, S. K., & Wang, Z. G. (2005). Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition. Applied Physics A: Materials Science & Processing, 80(1), 141–144. https://doi.org/10.1007/s00339-003-2186-5
Chicago
Chen, D.J., B. Shen, Z.X. Bi, K.X. Zhang, S.I. Gu, R. Zhang, Y. Shi, et al. 2005. “Phase-Separation Suppression in GaN-Rich Side of GaNP Alloys Grown by Metal-Organic Chemical Vapor Deposition.” Applied Physics A: Materials Science & Processing 80 (1): 141–44. doi:10.1007/s00339-003-2186-5.