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Efficient photoelectrochemical overall water-splitting of MoS2/g-C3N4 n–n type heterojunction film.
- Source :
-
Journal of Chemical Physics . 6/7/2021, Vol. 154 Issue 21, p1-7. 7p. - Publication Year :
- 2021
-
Abstract
- The construction of heterojunctions has attracted considerable attention among the various strategies of water-splitting for hydrogen evolution due to their band structure advantages. In this research, we combined chemical vapor deposition and pulsed laser deposition to fabricate MoS2/g-C3N4 heterojunction films on indium-tin oxide glass substrates, and we studied the photoelectrochemical (PEC) performance. The x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and scanning electron microscope characterizations suggested the successful preparation of MoS2/g-C3N4 heterojunction films. In particular, the shifts of the peak positions in the XPS spectra indicated the formation of a strong interaction between the g-C3N4 and MoS2 films. After depositing MoS2 on the g-C3N4 film, the visible-light absorption was enhanced and broadened, the electrical conductivity improved, and the intensity of the photoluminescence peak decreased. As a result, the greater generation, faster transport, and lower recombination rate of electrons and holes caused the heterojunction films to show higher PEC performance. More importantly, the obtained MoS2/g-C3N4 film was confirmed to be an n–n type heterojunction and to have a typical type-II band structure, which could indeed suppress the recombination and promote the separation, transfer, and transport of photogenerated electron–holes. Finally, the obtained MoS2/g-C3N4 film successfully achieved the overall water-splitting and the H2 evolution rate when the visible-light radiation reached 252 µmol/h. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00219606
- Volume :
- 154
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Journal of Chemical Physics
- Publication Type :
- Academic Journal
- Accession number :
- 150746449
- Full Text :
- https://doi.org/10.1063/5.0051199