Microwave assisted synthesis of SnS nanosheets for fabrication of large area SnS/Si heterojunction.

• We reported the green synthesis of 2D-SnS nanosheets by microwave assisted technique. • SnS/Si heterojunction shows current rectification with ideality factor of 1.4. • Photoresponsivity of 86.2 mA/W, detectivity of 1010 Jones and EQE of 16% are realised. • Photodetector shows reproducible and stable photoresponse for prolonged time interval of 3600 s. Graphene like 2D-semiconductors of IV-VI group have captivated widespread attention in the field of opto-electronics due to their high earth abundant and distinct physical properties. Herein, we report the green synthesis of approach for 2D-SnS nanosheets by microwave assisted solvothermal process. Easy, rapid and high-yield synthesis process produced phase pure and crystalline graphene like SnS nanosheets. Subsequently, highly stable and large area photodetector based on 2D-SnS/3D-Si has been fabricated. Photodetector has shown obvious current rectifying behaviour with ideality factor of 1.4. Owing strong light matter interaction in 2D-SnS, photodetector has demonstrated highly reproducible photoresponse in broad spectral range and fast photoswitching action with response time of 150 ms. Encouragingly, photodetector has shown excellent opto-electronic stability for prolonged illumination for more than 3500 s and reproducible photoswitching for 200 cycles of periodic illumination. Overall, present finding advocates potential in fabrication of high-performance opto-electronics through green synthesis approach. [ABSTRACT FROM AUTHOR]