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Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics.
- Source :
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IEEE Transactions on Electron Devices . Apr2021, Vol. 68 Issue 4, p2107-2115. 9p. - Publication Year :
- 2021
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Abstract
- The (doped-)hafnia-based’ ferroelectric FET (FeFET) is a promising candidate for low-power nonvolatile memories and shows potential use as a steep-slope low-power logic device. This requires accurate modeling of the metal-ferroelectric-insulator-silicon (MFIS) gate stack electrostatics. Here, we present a hardware-validated FeFET compact model that resolves three key aspects in the MFIS electrostatics pertaining to a multidomain ferroelectric (FE) layer: 1) the nonradiative multiphonon process-based charge trapping; 2) the source-to-drain channel percolation due to spatial nonuniformity of FE domain switching; and 3) the nucleation-growth domain reversal dynamics using a phenomenological formalism. The polarization charge is calculated by discretized domain switching in transient under distributed coercive fields. Based on the comparison of the model versus experimental data on Hf0.5Zr0.5O2 n-FeFET hardware, we prove that the onset of FE VTH lowering starts with the source-to-drain percolation path formation when enough FE domains have been flipped up by the gate bias. We further demonstrate that the field-independent domain growth is the fundamental origin of the measured steep subthreshold slope during the downward ID – VG sweep. The model ultimately aims to lay down the groundwork for a unified FeFET compact model for both memory- and logic-oriented applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 150518016
- Full Text :
- https://doi.org/10.1109/TED.2021.3049761