Cite
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs.
MLA
Li, Kan, et al. “Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs.” IEEE Transactions on Nuclear Science, vol. 68, no. 5, May 2021, pp. 740–47. EBSCOhost, https://doi.org/10.1109/TNS.2021.3065563.
APA
Li, K., Zhang, E. X., Gorchichko, M., Wang, P. F., Reaz, M., Zhao, S. E., Hiblot, G., Van Huylenbroeck, S., Jourdain, A., Alles, M. L., Reed, R. A., Fleetwood, D. M., & Schrimpf, R. D. (2021). Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs. IEEE Transactions on Nuclear Science, 68(5), 740–747. https://doi.org/10.1109/TNS.2021.3065563
Chicago
Li, Kan, En Xia Zhang, Mariia Gorchichko, Peng Fei Wang, Mahmud Reaz, Simeng E. Zhao, Gaspard Hiblot, et al. 2021. “Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs.” IEEE Transactions on Nuclear Science 68 (5): 740–47. doi:10.1109/TNS.2021.3065563.