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Single-Event Latchup in a 7-nm Bulk FinFET Technology.

Authors :
Ball, D. R.
Sheets, C. B.
Xu, L.
Cao, J.
Wen, S.-J.
Fung, R.
Cazzaniga, C.
Kauppila, J. S.
Massengill, L. W.
Bhuva, B. L.
Source :
IEEE Transactions on Nuclear Science. May2021, Vol. 68 Issue 5, p830-834. 5p.
Publication Year :
2021

Abstract

Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL data is analyzed to determine the holding voltage ($V_{\mathrm {HOLD}}$) required to sustain SEL, which can be as low as 0.85 V at elevated temperatures. Such low SEL holding voltage within 100 mV of nominal supply voltage poses a major reliability threat. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
68
Issue :
5
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
150449123
Full Text :
https://doi.org/10.1109/TNS.2021.3049736