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Single-Event Latchup in a 7-nm Bulk FinFET Technology.
- Source :
-
IEEE Transactions on Nuclear Science . May2021, Vol. 68 Issue 5, p830-834. 5p. - Publication Year :
- 2021
-
Abstract
- Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL data is analyzed to determine the holding voltage ($V_{\mathrm {HOLD}}$) required to sustain SEL, which can be as low as 0.85 V at elevated temperatures. Such low SEL holding voltage within 100 mV of nominal supply voltage poses a major reliability threat. [ABSTRACT FROM AUTHOR]
- Subjects :
- *HIGH temperatures
*ALPHA rays
*BULK solids
*TEMPERATURE distribution
*VOLTAGE
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 68
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 150449123
- Full Text :
- https://doi.org/10.1109/TNS.2021.3049736