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Electrical contacts to few-layer MoS2 with phase-engineering and metal intercalation for tuning the contact performance.
- Source :
-
Journal of Chemical Physics . 5/14/2021, Vol. 154 Issue 18, p1-10. 10p. - Publication Year :
- 2021
-
Abstract
- Due to Fermi-level pinning in metal–two-dimensional MoS2 junctions, improving the performance of MoS2-based electrical devices is still under extensive study. The device performance of few-layer MoS2 depends strongly on the number of layers. In this work, via density-functional theory calculations, a comprehensive understanding from the atomistic view was reached for the interlayer interaction between metal and few-layer MoS2 with phase-engineering and intercalation doping, which are helpful for improving the contact performance. These two methods are probed to tune the performance of few-layer MoS2-based field-effect transistors, and both of them can tune the Schottky barrier height. Phase-engineering, which means that the MoS2 layer in contact with metal is converted to the T phase, can transform the Schottky barrier from n- to p-type. Intercalation doping, which takes advantage of annealing and results in metal atom interaction in between MoS2 layers, makes the MoS2 layers become quasi-freestanding and converts the indirect bandgap into direct bandgap. Our atomistic insights help improve the performance of few-layer MoS2-based electronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00219606
- Volume :
- 154
- Issue :
- 18
- Database :
- Academic Search Index
- Journal :
- Journal of Chemical Physics
- Publication Type :
- Academic Journal
- Accession number :
- 150294284
- Full Text :
- https://doi.org/10.1063/5.0046338